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X9410 H11C2SD 2R400A MMBT5401 120000 53102 TC9134P MC9S12
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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1268 APPLICATIONS For power switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SB943
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM

PARAMETER
CONDITIONS Open emitter
Collector-base voltage Collector-emitter voltage
HAN INC
Emitter-base voltage Collector current Collector current-peak
SEM GE
Open base
OND IC
TOR UC
VALUE -130 -80 -7 -3 -6
UNIT V V V A A
Open collector
Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature
2 W 30 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-2A, IB=-0.1A IC=-2A, IB=-0.1A VEB=-5V; IC=0 VCB=-100V; IE=0 IC=-0.1A ; VCE=-2V IC=-0.5A ; VCE=-2V IC=-0.5A; VCE=-10V 45 60 30 MIN -80 TYP.
2SB943
SYMBOL V(BR)CEO VCEsat VBEsat IEBO ICBO hFE-1 hFE-2 fT
MAX
UNIT V
-0.5 -1.5 -50 -10 |I |I
V V A A
260 MHz
Switching times ton tstg tf
Turn-on time
ANG CH
P 130-260
Storage time Fall time
hFE-2 Classifications R 60-120 Q 90-180
IN
EMIC ES
IC=-0.5A;IB1=-IB2=-50mA
OND
TOR UC
0.3 1.1 0.3 |I |I |I
s s s
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB943
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3


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